Ballistic transport in InSb/InAlSb antidot lattices
Identifieur interne : 00A378 ( Main/Repository ); précédent : 00A377; suivant : 00A379Ballistic transport in InSb/InAlSb antidot lattices
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Abstract
We investigate magnetotransport properties of antidot lattices fabricated on high-mobility InSb/InAlSb heterostructures. The temperature dependencies of the ballistic magnetoresistance peaks due to the antidot lattice are studied, and compared with mobility and density data over the same temperature range. A scattering time particular to antidot lattices is deduced, with a linear dependence on temperature between 0.4 and 50 K, attributed to acoustic phonon scattering. The mobility does not vary substantially over this temperature range, whereas above ∼60 K a quadratic dependence of inverse mobility on temperature is noticed, attributed to optical phonon scattering. The very weak temperature dependence of the width of the ballistic magnetoresistance peaks indicates negligible thermal smearing for electrons in the InSb quantum well, a result of the small electron effective mass.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ballistic transport in InSb/InAlSb antidot lattices</title><author><name sortKey="Chen, Hong" uniqKey="Chen H">Hong Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens</wicri:cityArea></affiliation></author><author><name sortKey="Heremans, J J" uniqKey="Heremans J">J. J. Heremans</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens</wicri:cityArea></affiliation></author><author><name sortKey="Peters, J A" uniqKey="Peters J">J. A. Peters</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens</wicri:cityArea></affiliation></author><author><name sortKey="Goel, N" uniqKey="Goel N">N. Goel</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0304302</idno><date when="2004-06-28">2004-06-28</date><idno type="stanalyst">PASCAL 04-0304302 AIP</idno><idno type="RBID">Pascal:04-0304302</idno><idno type="wicri:Area/Main/Corpus">00B391</idno><idno type="wicri:Area/Main/Repository">00A378</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Ballistic transport</term><term>Experimental study</term><term>Hall mobility</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Magnetoresistance</term><term>Phonons</term><term>Semiconductor heterojunctions</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7220M</term><term>6322</term><term>7363K</term><term>7547J</term><term>7220H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Hétérojonction semiconducteur</term><term>Magnétorésistance</term><term>Transport balistique</term><term>Mobilité Hall</term><term>Phonon</term><term>Point quantique semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate magnetotransport properties of antidot lattices fabricated on high-mobility InSb/InAlSb heterostructures. The temperature dependencies of the ballistic magnetoresistance peaks due to the antidot lattice are studied, and compared with mobility and density data over the same temperature range. A scattering time particular to antidot lattices is deduced, with a linear dependence on temperature between 0.4 and 50 K, attributed to acoustic phonon scattering. The mobility does not vary substantially over this temperature range, whereas above ∼60 K a quadratic dependence of inverse mobility on temperature is noticed, attributed to optical phonon scattering. The very weak temperature dependence of the width of the ballistic magnetoresistance peaks indicates negligible thermal smearing for electrons in the InSb quantum well, a result of the small electron effective mass.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>26</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ballistic transport in InSb/InAlSb antidot lattices</s1></fA08><fA11 i1="01" i2="1"><s1>CHEN (Hong)</s1></fA11><fA11 i1="02" i2="1"><s1>HEREMANS (J. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>PETERS (J. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>GOEL (N.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHUNG (S. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>SANTOS (M. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, and the Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, The University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>5380-5382</s1></fA20><fA21><s1>2004-06-28</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0304302</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate magnetotransport properties of antidot lattices fabricated on high-mobility InSb/InAlSb heterostructures. The temperature dependencies of the ballistic magnetoresistance peaks due to the antidot lattice are studied, and compared with mobility and density data over the same temperature range. A scattering time particular to antidot lattices is deduced, with a linear dependence on temperature between 0.4 and 50 K, attributed to acoustic phonon scattering. The mobility does not vary substantially over this temperature range, whereas above ∼60 K a quadratic dependence of inverse mobility on temperature is noticed, attributed to optical phonon scattering. The very weak temperature dependence of the width of the ballistic magnetoresistance peaks indicates negligible thermal smearing for electrons in the InSb quantum well, a result of the small electron effective mass.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B20M</s0></fC02><fC02 i1="02" i2="3"><s0>001B60C22</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C63K</s0></fC02><fC02 i1="04" i2="3"><s0>001B70E47J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70B20H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7220M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6322</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7363K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7547J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7220H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Magnétorésistance</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Magnetoresistance</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Transport balistique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ballistic transport</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Mobilité Hall</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Hall mobility</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Phonon</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Phonons</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fN21><s1>180</s1></fN21><fN47 i1="01" i2="1"><s0>0425M000098</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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